IRF840 Power MOSFET
Vishay's third-generation power MOSFETs, IRF840 and SiHF840, offer a superior combination of fast switching, ruggedized design, low on-resistance, and cost-effectiveness. The TO-220AB package is universally preferred for commercial-industrial applications with power dissipation levels up to 50 W. Its low thermal resistance and cost make it widely accepted in the industry.
Because these MOSFETs have high speed switching features, they are ideal to be used in applications like power supplies, inverters and motor controllers used for speed adjustment.
Key Features:
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirements
Product Specifications:
- VDS (Drain-Source Voltage): 500 V
- RDS(on) (On-Resistance): VGS = 10 V, 0.85 Ω
- Qg max. (Total Gate Charge): 63 nC
- Configuration: Single N-Channel MOSFET
- Package: TO-220AB
Absolute Maximum Ratings:
- Drain-Source Voltage (VDS): 500 V
- Gate-Source Voltage (VGS): ± 20 V
- Continuous Drain Current (ID): 8.0 A (TC = 25 °C), 5.1 A (TC = 100 °C)
- Maximum Power Dissipation (PD): 125 W
Thermal Resistance Ratings:
- Maximum Junction-to-Ambient (RthJA): 62 °C/W
- Case-to-Sink, Flat, Greased Surface (RthCS): 0.50 °C/W
- Maximum Junction-to-Case (Drain): 1.0 °C/W
Specifications (TJ = 25 °C):
- Static Drain-Source Breakdown Voltage (VDS): 500 V
- Gate-Source Threshold Voltage (VGS(th)): 2.0 - 4.0 V
- Zero Gate Voltage Drain Current (IDSS): 25 μA (VDS = 500 V, VGS = 0 V)
Datasheet
Please find the link to the datasheet here: IRF840 Power MOSFET Datasheet