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IRF540N mosfet

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Terms and Conditions

Internal Reference: EC-208

IRF540N MOSFET

Unleash efficiency with the IRF540N MOSFET, employing advanced trench technology for superior RDS(ON) and low gate charge. Perfect for power switching, hard-switched, and high-frequency circuits, as well as uninterruptible power supplies.

Key Features:

  • VDS = 100V, ID = 35A, RDS(ON) < 30mΩ @ VGS=10V
  • High-density cell design for lower Rdson
  • Fully characterized avalanche voltage and current
  • Good stability with high EAS
  • TO-220 package for excellent heat dissipation
  • 100% UIS TESTED, 100% DVDS TESTED

Applications:

  • Ideal for power switching applications
  • Perfect for hard-switched and high-frequency circuits
  • Reliable in uninterruptible power supplies

Maximum Ratings:

  • Drain-Source Voltage (VDS): 100V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): 35A
  • Maximum Power Dissipation: 70W
  • Operating Temperature Range: -55 to 175°C

Electrical Characteristics:

  • Breakdown Voltage (BVDSS): 100V
  • Zero Gate Voltage Drain Current (IDSS): Up to 1μA
  • Gate Threshold Voltage (VGS(th)): 1.2 - 3V
  • On-State Resistance (RDS(ON)): 25 - 30mΩ @ VGS=10V, ID=12A

Datasheet

The datasheet for the IRF540N MOSFET can be found here: IRF540N Datasheet