BT40T60
Needing the best of both worlds between a transistor and a MOSFET? This IGBT offers you the working principle of a MOSFET, but it acts like a transistor. This means that the IGBT only needs a certain voltage on the gate in order to allow current to flow through it, but has lower on-state and switching losses, like a transistor.
Advantages of IGBT:
- High voltage capabilities
- Low on resistance
- Ease of drive
- Very low gate drive current
Technical specifications:
| Collector emitter voltage | 600V |
| Max gate emitter voltage | 20V |
| Max current | 80A |
| Max gate emitter voltage | 7V |
| Rise time | 50ns |