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Component Electronic Electronics Transistor

Internal Reference: EC-390


Needing the best of both worlds between a transistor and a MOSFET? This IGBT offers you the working principle of a MOSFET, but it acts like a transistor. This means that the IGBT only needs a certain voltage on the gate in order to allow current to flow through it, but has lower on-state and switching losses, like a transistor.

Advantages of IGBT:

  • High voltage capabilities
  • Low on resistance
  • Ease of drive
  • Very low gate drive current

Technical specifications:

 Collector emitter voltage 600V
Max gate emitter voltage 20V
Max current 80A
Max gate emitter voltage 7V
Rise time 50ns