F12N60 MOSFET
The F12N60 N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high-efficiency switch mode power supply.
Technical specifications:
| Gate voltage | 30V |
| Drain Source voltage | 600V |
| Max continuous drain current | 12A |
| Max pulse drain current | 48A |
| Gate threshold voltage | 4V |
