F12N60 MOSFET

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Component Electronic Electronics

Internal Reference: EC-229


 

F12N60 MOSFET

The F12N60 N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high-efficiency switch mode power supply.

Technical specifications:

Gate voltage  30V
Drain Source voltage 600V
Max continuous drain current 12A
Max pulse drain current 48A
Gate threshold voltage 4V

F12N60 MOSFET pin layout