IRF830PBF Power mosfet
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Internal Reference: EC-226


The IRF830 is a silicon N-channel Enhanced MOSFET designed with advanced technology to reduce conduction loss, enhance switching performance, and boost avalanche energy. This MOSFET is well-suited for Switched Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications.

Key Characteristics:

  • VDS: 550V, ID: 4A, RDS(ON). Typ: 2.2 Ω
  • Fast Switching, Low Crss
  • 100% Avalanche Tested
  • Improved dv/dt Capability


  • Ideal for high frequency switching mode power supply applications
  • Active Power Factor Correction

Absolute Ratings:

  • Drain-to-Source Voltage (VDSS): 550V
  • Continuous Drain Current (ID): 4A
  • Pulsed Drain Current (IDM): 16A
  • Gate-to-Source Voltage (VGS): ±30V
  • Single Pulse Avalanche Energy (EAS): 10mJ
  • Power Dissipation (PD): 33W (TO-220)
  • Operating Temperature Range: -55 to 150°C

Extra resources:

Datasheet: IRF830 Power MOSFET Datasheet