IRF510PBF Power mosfet
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Component Electronic Electronics

Internal Reference: EC-221


Discover the power of the Vishay IRF510 Power MOSFET, engineered with advanced technology for optimal performance. One of the big advantages of MOSFETs include that they do not drain current from the gate pin, which means that you can easily control them without stressing about the current capabilities of your logic circuit. These MOSFETs features include a dynamic dV/dt rating, repetitive avalanche resilience, and an impressive 175 °C operating temperature. This MOSFET boasts fast switching capabilities, making it suitable for various applications.


  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • 175 °C operating temperature
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements
  • RoHS-compliant 
  • Efficient power control with low on-resistance
  • Versatile design for diverse applications
  • Reliable performance in commercial-industrial settings
  • Cost-effective solution for power dissipation up to 50W

Product Summary:

  • VDS (Drain-Source Voltage): 100V
  • RDS (on) (On-State Resistance): 0.54Ω @ VGS=10V
  • Qg max. (Total Gate Charge): 8.3nC
  • Configuration: Single N-Channel MOSFET
  • Package: TO-220AB

Absolute Maximum Ratings:

  • Drain-Source Voltage: 100V
  • Gate-Source Voltage: ±20V
  • Continuous Drain Current: 5.6A (TC = 25 °C)
  • Pulsed Drain Current: 20A
  • Operating Junction and Storage Temperature Range: -55 to +175 °C

Thermal Resistance Ratings (TO-220AB):

  • Maximum Junction-to-Ambient: 62 °C/W
  • Case-to-Sink, Flat, Greased Surface: 0.50 °C/W
  • Maximum Junction-to-Case (Drain): 3.5 °C/W

Specifications (TJ = 25 °C):

  • Drain-Source Breakdown Voltage: 100V
  • Gate-Source Threshold Voltage: 2.0 - 4.0V
  • Drain-Source On-State Resistance: 0.54Ω (VGS = 10V, ID =3.4 A)
  • Input Capacitance: 180pF
  • Total Gate Charge: 8.3nC
  • Turn-On Delay Time: 6.9ns
  • Continuous Source-Drain Diode Current: 5.6A

Extra resources

Datasheet: IRF510PBF Power MOSFET