IRF640 Power mosfet
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Component Electronic Electronics

Internal Reference: EC-216


The IRF640 is a silicon N-channel Enhanced MOSFET designed with advanced technology to reduce conduction loss, enhance switching performance, and boost avalanche energy. This transistor is well-suited for Switched Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications.

Key Characteristics:

  • VDS: 200V, ID: 18A, RDS(ON).Typ: 0.13 Ω
  • Fast Switching, Low Crss
  • 100% Avalanche Tested
  • Improved dv/dt Capability
  • RoHS Product


  • Ideal for high frequency switching mode power supply applications
  • Power supplies
  • Heavy current switching
  • H-bridge and PWM motor drivers

Absolute Ratings:

  • Drain-to-Source Voltage (VDSS): 200V
  • Continuous Drain Current (ID): 18A
  • Pulsed Drain Current (IDM): 72A
  • Gate-to-Source Voltage (VGS): ±30V
  • Single Pulse Avalanche Energy (EAS): 580mJ
  • Power Dissipation (PD): 130W (TO-220), 42W (TO-220F)
  • Operating Temperature Range: -55 to 150°C

Thermal Characteristics:

  • Junction-to-Case (RθJC): 0.84 ℃/W (TO-220\TO-251\TO-252)
  • Junction-to-Ambient (RθJA): 62.5 ℃/W

Extra resources:

Datasheet: IRF640 Power MOSFET Datasheet