IRF640 Power MOSFET

The IRF640 is a silicon N-channel Enhanced MOSFET designed with advanced technology to reduce conduction loss, enhance switching performance, and boost avalanche energy. This transistor is well-suited for Switched Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications.

Key Characteristics:

• VDS: 200V, ID: 18A, RDS(ON).Typ: 0.13 Ω
• Fast Switching, Low Crss
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Product

Applications:

• Ideal for high frequency switching mode power supply applications
• Power supplies
• Heavy current switching
• H-bridge and PWM motor drivers

Absolute Ratings:

• Drain-to-Source Voltage (VDSS): 200V
• Continuous Drain Current (ID): 18A
• Pulsed Drain Current (IDM): 72A
• Gate-to-Source Voltage (VGS): ±30V
• Single Pulse Avalanche Energy (EAS): 580mJ
• Power Dissipation (PD): 130W (TO-220), 42W (TO-220F)
• Operating Temperature Range: -55 to 150°C

Thermal Characteristics:

• Junction-to-Case (RθJC): 0.84 ℃/W (TO-220\TO-251\TO-252)
• Junction-to-Ambient (RθJA): 62.5 ℃/W

Extra resources:

Datasheet: IRF640 Power MOSFET Datasheet