IRF530 mosfet
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Internal Reference: EC-213


The IRF530 MOSFET utilizes advanced trench technology, ensuring outstanding RDS(ON) and low gate charge. Its versatile design makes it suitable for a wide range of applications, including power switching, hard-switched, high-frequency circuits, and uninterruptible power supply systems.

Key Characteristics:

  • VDS = 100V, ID = 15A
  • RDS(ON) < 90mΩ @ VGS=10V
  • RDS(ON) < 115mΩ @ VGS=4.5V
  • High-density cell design for lower Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for efficient heat dissipation
  • 100% UIS TESTED!
  • 100% DVDS TESTED!

Absolute Maximum Ratings:

  • Drain-Source Voltage (VDS): 100V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): 15A
  • Pulsed Drain Current (IDM): 40A
  • Maximum Power Dissipation (Tc=25℃): 31W
  • Single Pulse Avalanche Energy (EAS): 21mJ
  • Operating Junction and Storage Temperature Range: -55 To 175℃
  • Thermal Resistance, Junction-to-Case (RθJC): 4.8 ℃/W


For the full technical specifications please refer to the datasheet: IRF530 MOSFET Datasheet