Power mosfet IRFZ44 49a 55v

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Component

Internal Reference: EC-070

Power Mosfet IRFZ44 49A 55V

Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels of approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

IRFZ44 Specifications:

IRFZ44 Datasheet.

Channel Type N
Maximum Continuous Drain Current 49 A
Maximum Drain Source Voltage 55 V
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 17.5 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 94 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Transistor Material Si
Typical Gate Charge @ Vgs 63 nC @ 10 V
Maximum Operating Temperature +175 °C
Series HEXFET
Height 8.77mm
Minimum Operating Temperature -55 °C