DIP NOR FLASH Memory Chip EN25T80-75QCP Flash /8M

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Internal Reference: EC-034

The EN25T80 is an 8M-bit (1024K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high-speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction.

The EN25T80 is designed to allow either a single Sector at a time or full chip erase operation. The EN25T80 can be configured to protect part of the memory as the software protected mode. The device can sustain a minimum of 100K program/erase cycles on each sector.


  • Single power supply operation - Full voltage range: 2.7-3.6 volt
  • 8 Mbit Serial Flash - 8 M-bit/1024 K-byte/4096 pages - 256 bytes per programmable page
  • High performance - 100MHz clock rate - dual data mode
  • Low power consumption - 5 mA typical active current - 1 μA typical power-down current
  • Uniform Sector Architecture: - 256 sectors of 4-Kbyte - 16 blocks of 64-Kbyte - Any sector or block can be erased individually
  • Software and Hardware Write Protection:
    • Write Protect all or portion of memory via software
    • Enable/Disable protection with WP# pin
  • High-performance program/erase speed
    • Page program time: 1.5ms typical
    • The sector erase time: 150ms typical
    • Block erase time 800ms typical
    • Chip erase time: 10 Seconds typical
  • Lockable 256 byte OTP security sector
  • Minimum 100K endurance cycle
  • Commercial and industrial temperature Range

EN25T80 Datasheet